2SK170
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
Low Noise Audio Amplifier Applications
Unit: mm
- Remended for first stages of EQ and M.C. head amplifiers.
- High |Yfs|: |Yfs| = 22 m S (typ.) (VDS = 10 V, VGS = 0, IDSS = 3 m A)
- High breakdown voltage: VGDS =
- 40 V
- Low noise: En = 0.95 n V/Hz1/2 (typ.)
(VDS = 10 V, ID = 1 m A, f = 1 k Hz)
- High input impedance: IGSS =
- 1 n A (max) (VGS =
- 30 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range
VGDS IG PD Tj Tstg
- 40
10 m A
400 m W
°C
- 55~125
°C
JEDEC
TC-92
Note:
Using continuously under heavy loads (e.g. the application of
JEITA
SC-43 high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the
TOSHIBA
2-5F1D reliability significantly even if the operating conditions (i.e. operating...
