2SK2009
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
High Speed Switching Applications Analog Switch Applications
- High input impedance.
- Low gate threshold voltage: Vth = 0.5 to 1.5 V
- Excellent switching times: ton = 0.06 μs (typ.) toff = 0.12 μs (typ.)
- Low drain-source ON resistance: RDS (ON) = 1.2 Ω (typ.)
- Small package
- Enhancement-mode
Marking
Equivalent Circuit
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage Gate-source voltage DC drain current Drain power dissipation Channel temperature Storage temperature range
Symbol
Rating
Unit
VDS VGSS
ID PD Tch Tstg
±20
200 m A
200 m W
°C
- 55 to 150
°C
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1F
Weight: 0.012 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even...
