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TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK2145
2SK2145
Audio Frequency Low Noise Amplifier Applications
• Including two devices in SM5 (super mini type with 5 leads.) • High |Yfs|: |Yfs| = 15 mS (typ.) at VDS = 10 V, VGS = 0 • High breakdown voltage: VGDS = −50 V • Low noise: NF = 1.0dB (typ.)
at VDS = 10 V, ID = 0.5 mA, f = 1 kHz, Rg = 1 kΩ • High input impedance: IGSS = −1 nA (max) at VGS = −30 V
Marking
Pin Assignment (top view)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 common)
Characteristics Gate-drain voltage Gate current
Drain power dissipation
Junction temperature Storage temperature
Symbol
VGDS IG PD (Note 1) Tj Tstg
Rating −50 10
300
125 −55~125
Unit V mA
mW
°C °C
JEDEC
―
JEITA
―
TOSHIBA
2-3L1C
Weight: 0.016 g (typ.
2SK2145 Datasheet
