2SK2145 Datasheet | Toshiba

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type Audio Frequency Low Noise Amplifier Applications - Including two devices in SM5 (super mini type with 5 leads.) - High |Yfs|: |Yfs| = 15 m S (typ.) at VDS = 10 V, VGS = 0 - High breakdown voltage: VGDS = - 50 V - Low noise: NF = 1.0d B (typ.) at VDS = 10 V, ID = 0.5 m A, f = 1 k Hz, Rg = 1 kΩ - High input impedance: IGSS = - 1 n A (max) at VGS = - 30 V Marking Pin Assignment (top view) Unit: mm Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 mon) Characteristics Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature Symbol VGDS IG PD (Note 1) Tj Tstg Rating - 50 10 - 55~125 Unit V m A m W °C °C JEDEC ― JEITA ― TOSHIBA 2-3L1C Weight: 0.016 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating 1 2007-11-01 Electrical Characteristics (Ta = 25°C) (Q1, Q2 mon) Characteristics...