• Part: 2SK2266
  • Description: Silicon N Channel MOS Type Field Effect Transistor
  • Manufacturer: Toshiba
  • Size: 258.68 KB
Download 2SK2266 Datasheet PDF
Toshiba
2SK2266
2SK2266 is Silicon N Channel MOS Type Field Effect Transistor manufactured by Toshiba.
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2- π- MOSV) Chopper Regulator, DC- DC Converter and Motor Drive Applications Unit: mm l 4 V gate drive l Low drain- source ON resistance : RDS (ON) = 22 mΩ (typ.) l High forward transfer admittance : |Yfs| = 27 S (typ.) l Low leakage current : IDSS = 100 µA (max) (VDS = 60 V) l Enhancement- mode : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drain- source voltage Drain- gate voltage (RGS = 20 kΩ) Gate- source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche...