2SK2398 Overview
2SK2398 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2398 DC−DC Converter and Motor Drive Applications Unit: mm l Low drain−source ON resistance : RDS (ON) = 22 mΩ (typ.) l High forward transfer admittance.
2SK2398 Key Features
- Low drain−source ON resistance : RDS (ON) = 22 mΩ (typ.)
- High forward transfer admittance : |Yfs| = 27 S (typ.)
- Low leakage current : IDSS = 100 µA (max) (VDS = 60 V)
- Enhancement−mode : Vth = 1.5~3.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Dra
