Datasheet Summary
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π- MOSV)
Chopper Regulator, DC- DC Converter and Motor Drive Applications
Unit: mm l Low drain- source ON resistance : RDS (ON) = 6.4 Ω (typ.) l High forward transfer admittance : |Yfs| = 0.85 S (typ.) l Low leakage current : IDSS = 100 µA (max) (VDSS = 600 V) l Enhancement- mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain- source voltage
Drain- gate voltage (RGS = 20 kΩ) Gate- source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation
(Note 2)
Single pulse avalanche energy (Note 3)
Avalanche current
Repetitive avalanche energy (Note...