2SK2952
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π- MOSV)
Chopper Regulator Applications
Unit: mm l Low drain- source ON resistance : RDS (ON) = 0.4 Ω (typ.) l High forward transfer admittance : |Yfs| = 8.0 S (typ.) l Low leakage current : IDSS = 100 µA (max) (VDS = 400 V) l Enhancement- mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 m A)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain- source voltage
Drain- gate voltage (RGS = 20 kΩ) Gate- source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy (Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS VDGR VGSS
ID IDP PD
IAR EAR Tch Tstg
Rating
400 400 ±30 8.5 34 40
8.5 4.0 150
- 55~150
Unit
V V V A A W m J
A m J °C °C
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
Thermal Characteristics
Characteristics
Symbol Max Unit
Thermal resistance,...
