2SK2952 - N-CHANNEL MOS TYPE TRANSISTOR

Toshiba

Datasheet Details

Part number	2SK2952
Manufacturer	Toshiba
File Size	254.23 KB
Description	N-CHANNEL MOS TYPE TRANSISTOR
Datasheet	2SK2952 Datasheet

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2SK2952 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2952 Chopper Regulator Applications Unit: mm l Low drain−source ON resistance : RDS (ON) = 0.4 Ω (typ.) l High forward transfer admittance : |Yfs| = 8.0 S (typ.) l Low leakage current : IDSS = 100 µA (max) (VDS = 400 V) l Enhancement−mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 400 400 ±30 8.5 34 40 427 8.