Datasheet Summary
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π- MOSV)
Chopper Regulator, DC- DC Converter and Motor Drive Applications l Low drain- source ON resistance l High forward transfer admittance l Low leakage current l Enhancement- mode : RDS (ON) = 4.2 Ω (typ.) : |Yfs| = 1.7 S (typ.) Unit: mm
: IDSS = 100 µA (max) (VDS = 600 V) : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Tc = 25°C)
Characteristics Drain- source voltage Drain- gate voltage (RGS = 20 kΩ) Gate- source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP IDP PD EAS IAR EAR Tch Tstg Rating 600 600 ±30 2 5 8 25 93 2 2.5 150
- 55~150 Unit V V V A A A W mJ A mJ °C °C
Pulse (t = 1 ms)...