2SK3085
Key Features
- Low drain-source ON resistance: RDS (ON) = 1.7 Ω (typ.) High forward transfer admittance: |Yfs| = 3 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 600 V) Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm
- 400 V, VGS = 10 V, ID = 3.5 A Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) ïYfsï Ciss Crss Coss tr ton VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±25 V, VDS = 0 V IG = ±10 mA, VDS = 0 V VDS = 600 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 1.8 A VDS = 10 V, ID = 1.8 A Min ¾ ±30 ¾ 600 2.0 ¾ 2.0 ¾ ¾ Typ. ¾ ¾ ¾ ¾ ¾ 1.7 3.0 800 6 65 15 50 15 85 20 10 10 Max ±10 ¾ 100 ¾ 4.0 2.2 ¾ ¾ ¾ pF Unit mA V mA V V W S
