2SK3506
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
Relay Drive and DC-DC Converter Applications Motor Drive Applications
- - Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.) High forward transfer admittance: |Yfs| = 26 S (typ.) Unit: mm
- Low leakage current: IDSS = 100 μA (max) (VDS = 30 V) ..
- Enhancement model: Vth = 1.5 to 3.0 V (VDS = 10 V, ID = 1 m A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 30 30 ±20 45 135 100 220 45 10 150
- 55 to150 Unit V V V A W m J A m J °C °C
Pulse (Note 1)
Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
JEDEC JEITA TOSHIBA
― SC-65 2-16C1B
Weight: 4.6 g (typ.)
Note: Using continuously under heavy loads (e.g. the...
