2SK3538
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
Switching Regulator, DC-DC Converter Applications
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- - Low drain-source ON resistance: RDS (ON) = 75 mΩ (typ.) High forward transfer admittance: |Yfs| = 7.0 S (typ.) Low leakage current: IDSS = 100 µA (VDS = 500 V) Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 m A) Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k W) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR (Note 3) Channel temperature Storage temperature range EAR Tch Tstg Rating 500 500 ±30 8 32 65 312 8 6.5 150 -55 to 150 Unit V V V A W m J A m J °C °C
Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy
JEDEC JEITA TOSHIBA
― SC-97 2-9F1B
Weight: 0.74 g (typ.)
Thermal Characteristics
4 Characteristics Thermal resistance, channel to case Symbol Rth...
