2SK3544
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (π-MOS V)
Switching Regulator Applications
- -
- - Low drain-source ON-resistance: RDS (ON) = 0.29 Ω (typ.) High forward transfer admittance: |Yfs| = 5.8 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDSS = 450 V) Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 m A) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Drain- source voltage Drain- gate voltage (RGS = 20 kΩ) Gate- source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 450 450 ±30 13 52 100 350 13 4.5 150
- 55 to 150 Unit V V V A W m J A m J °C °C
Drain power dissipation (Tc = 25°C) Single-pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
JEDEC JEITA TOSHIBA
― SC-67 2-10R1B
Weight: 0.74 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/curren...
