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2SK3544
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (π-MOS V)
2SK3544
Switching Regulator Applications
• • • • Low drain-source ON-resistance: RDS (ON) = 0.29 Ω (typ.) High forward transfer admittance: |Yfs| = 5.8 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDSS = 450 V) Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Drain–source voltage Drain–gate voltage (RGS = 20 kΩ) Gate–source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 450 450 ±30 13 52 100 350 13 4.
2SK3544 Datasheet
