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TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK362
For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications
2SK362
Unit: mm
• High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA (max) (VGS = −30 V) • Low RDS (ON): RDS (ON) = 80 Ω (typ.) (IDSS = 5 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range
VGDS IG PD Tj Tstg
−50 10 300 125 −55~125
V mA mW °C °C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.
2SK362 Datasheet
