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2SK3633
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOS IV)
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2SK3633
Unit: mm
Switching Regulator Applications
• • • • Low drain-source ON-resistance: RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance: |Yfs| = 5.2 S (typ.) Low leakage current: IDSS = 100 μA (VDS = 640 V) Enhancement mode: Vth = 2.0~4.
2SK3633 Datasheet
