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TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK365
For Audio Amplifier, Analog-Switch, Constant Current and Impedance Converter Applications
2SK365
Unit: mm
· High breakdown voltage: VGDS = −50 V · High input impedance: IGSS = −1.0 nA (max) (VGS = −30 V) · Low RDS (ON): RDS (ON) = 80 Ω (typ.) (IDSS = 5 mA) · Small package
Maximum Ratings (Ta = 25°C)
Characteristics
Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range
Symbol
VGDS IG PD Tj Tstg
Rating
-50 10 200 125 -55~125
Unit
V mA mW °C °C
Electrical Characteristics (Ta = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
2-4E1C
Weight: 0.13 g (typ.)
Characteristics
Symbol
Test Condition
Min Typ.
2SK365 Datasheet
