2SK365 Datasheet | Toshiba

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type For Audio Amplifier, Analog-Switch, Constant Current and Impedance Converter Applications Unit: mm - High breakdown voltage: VGDS = - 50 V - High input impedance: IGSS = - 1.0 n A (max) (VGS = - 30 V) - Low RDS (ON): RDS (ON) = 80 Ω (typ.) (IDSS = 5 m A) - Small package Maximum Ratings (Ta = 25°C) Characteristics Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range Symbol VGDS IG PD Tj Tstg Rating -50 10 200 125 -55~125 Unit V m A m W °C °C Electrical Characteristics (Ta = 25°C) JEDEC ― JEITA ― TOSHIBA 2-4E1C Weight: 0.13 g (typ.) Characteristics Symbol Test Condition Min Typ. Max Unit Gate cut-off current Gate-drain breakdown voltage Drain current Gate-source cut-off voltage Forward transfer admittance Input capacitance Reverse transfer capacitance Drain-source ON resistance IGSS V (BR) GDS VGS = -30 V, VDS = 0 VDS = 0, IG = -100 m A ¾ -50 IDSS (Note 1) VDS = 10 V, VGS =...