2SK367 Overview
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK367 For Audio, High Voltage Amplifier and Constant Current Applications 2SK367 Unit: mm High breakdown voltage: VGDS = −100 V (min) High input impedance:.
N-channel MOSFET
| Part number | 2SK367 |
|---|---|
| Manufacturer | Toshiba |
| File Size | 628.86 KB |
| Description | N-Channel MOSFET |
| Datasheet | 2SK367_ToshibaSemiconductor.pdf |
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TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK367 For Audio, High Voltage Amplifier and Constant Current Applications 2SK367 Unit: mm High breakdown voltage: VGDS = −100 V (min) High input impedance:.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
| 2SK3673-01MR | N-Channel MOSFET Transistor | Inchange Semiconductor | |
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2SK3673-01MR | N-CHANNEL SILICON POWER MOSFET | Fuji Electric |
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2SK3674-01JS | Power MOSFET | Fuji Electric |
| 2SK3674-01L | N-Channel MOSFET Transistor | Inchange Semiconductor | |
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2SK3674-01L | Power MOSFET | Fuji Electric |
| Part Number | Description |
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