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TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK367
For Audio, High Voltage Amplifier and Constant Current Applications
2SK367
Unit: mm
• High breakdown voltage: VGDS = −100 V (min) • High input impedance: IGSS = −1.0 nA (max) (VGS = −80 V) • Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range
VGDS IG PD Tj Tstg
−100 10 200 125
−55~125
V mA mW °C °C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
2SK367 Datasheet
