2SK367 datasheet by Toshiba.
| Part number | 2SK367 |
|---|---|
| Datasheet | 2SK367_ToshibaSemiconductor.pdf |
| File Size | 628.86 KB |
| Manufacturer | Toshiba |
| Description | N-Channel MOSFET |
|
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TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK367 For Audio, High Voltage Amplifier and Constant Current Applications 2SK367 Unit: mm High breakdown voltage: VGDS = −100 V (min) High input impedance:.
View 2SK3673-01MR datasheet index
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SK3673-01MR | N-Channel MOSFET Transistor | Inchange Semiconductor |
 |
2SK3673-01MR | N-CHANNEL SILICON POWER MOSFET | Fuji Electric |
|
2SK3674-01JS | Power MOSFET | Fuji Electric |
|
2SK3674-01L | N-Channel MOSFET Transistor | Inchange Semiconductor |
|
2SK3674-01L | Power MOSFET | Fuji Electric |
| Part Number | Description |
|---|---|
| 2SK3670 | Silicon N-Channel MOS Type Field Effect Transistor |
| 2SK362 | N-Channel MOSFET |
| 2SK363 | N-Channel MOSFET |
| 2SK3633 | N-Channel MOSFET |
| 2SK364 | N-Channel MOSFET |
| 2SK365 | N-Channel MOSFET |
| 2SK3656 | N-Channel MOSFET |
| 2SK3658 | N-Channel MOSFET |
| 2SK366 | N-Channel MOSFET |
| 2SK3662 | N-Channel MOSFET |
