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2SK3799
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSIV)
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2SK3799
Unit: mm : RDS (ON) = 1.0 Ω (typ.) : |Yfs| = 6.0 S (typ.)
Switching Regulator Applications
z Low drain-source ON resistance z High forward transfer admittance
z Low leakage current : IDSS = 100μA (max) (VDS = 720 V) z Enhancement model : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 900 900 ±30 8 24 50 1080 8 5 150 −55~150 Unit V V V A A W mJ A mJ °C °C
1. Gate 2. Drain 3.
2SK3799 Datasheet
