Datasheet Summary
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (ƒÎ -MOSVI)
Switching Regulator Applications
- -
- - Low drain-source ON resistance: R DS (ON) = 0.23ƒ¶ (typ.) High forward transfer admittance: |Yfs| =8.2 S (typ.) Low leakage current: IDSS = 100 ƒÊ A (V DS = 500 V) Enhancement-mode: V th = 2.0~4.0 V (V DS = 10 V, ID = 1 mA) Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ ) Gate-source voltage DC Drain current (Note 1) Symbol V DSS V DGR V GSS ID IDP PD EA S IAR EAR Tch Tstg Pulse (t = 1 ms) (Note 1) Rating 500 500 ±30 15 A 60 50 1.08 15 5.0 150 -55~150 W J A mJ °C °C
1: Gate 2: Drain 3: Source
Unit V V...
