Datasheet Summary
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TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI)
Switching Regulator Applications z Low drain-source ON resistance: z High forward transfer admittance: z Low leakage current: RDS (ON) = 0.18 Ω (typ.) |Yfs| = 10 S (typ.) Unit: mm
IDSS = 100 μA (max) (VDS = 450 V) z Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1...
