Datasheet Summary
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TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π- MOSⅣ)
Switching Regulator Applications
- -
- - Low drain-source ON resistance: RDS (ON) = 1.6 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 5.0 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 720 V)
3.3max. 2.0 9.0 20.0±0.3 2.0 Ф3.2±0.2 1.0 4.5
Unit: mm
15.9max.
Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1)
Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg
Rating 900 900 ±30 7 21 150 491 7 15 150
- 55~150
Unit V
1.8max.
1.0...
