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2SK4207
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV)
2SK4207
Swiching Regulator Applications
15.9max. Ф3.2±0.2 1.0 4.5 9.0 4.8max. 1 2 3
Unit: mm
z Low drain−source ON-resistance: RDS (ON) = 0.78 Ω (typ.) z High forward transfer admittance:|Yfs| = 11 S (typ.) z Low leakage current: IDSS = 100 μA (max) (VDS = 720 V)
2.0
3.3max.
1.0 －0.25
＋0.3
Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1)
Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg
Rating 900 900 ±30 13 39 150 491 13 15 150 −55 to 150
Unit
5.45±0.2 5.45±0.2
V V V A A W mJ A mJ °C °C
1.8max. 0.6－0.1
＋0.
2SK4207 Datasheet
