Datasheet4U Logo Datasheet4U.com

2SK879 - Silicon N-Channel MOSFET

📥 Download Datasheet

Datasheet preview – 2SK879

Datasheet Details

Part number 2SK879
Manufacturer Toshiba Semiconductor
File Size 162.62 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet 2SK879 Datasheet
Additional preview pages of the 2SK879 datasheet.

📁 Similar Datasheet

  • 2SK870 - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • 2SK870 - Silicon N-Channel Power F-MOS FET (Panasonic)
  • 2SK871 - N-Channel MOSFET (NEC)
  • 2SK873 - N-Channel MOSFET (NEC)
  • 2SK875 - N-Channel MOSFET (NEC)
  • 2SK800 - N-Channel MOSFET (NEC)
  • 2SK801 - MOSFET (NEC)
  • 2SK802 - N-Channel MOSFET (NEC)
  • 2SK803 - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • 2SK804 - N-Channel MOSFET Transistor (Inchange Semiconductor)
Other Datasheets by Toshiba Semiconductor

Full PDF Text Transcription

Click to expand full text
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK879 General Purpose and Impedance Converter and Condenser Microphone Applications 2SK879 Unit: mm · High breakdown voltage: VGDS = −50 V · High input impedance: IGSS = −1.0 nA (max) (VGS = −30 V) · Low noise: NF = 0.5dB (typ.) (RG = 100 kΩ, f = 120 Hz) · Small package Maximum Ratings (Ta = 25°C) Characteristics Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range Symbol VGDS IG PD Tj Tstg Rating -50 10 100 125 -55~125 Unit V mA mW °C °C Electrical Characteristics (Ta = 25°C) JEDEC ― JEITA SC-70 TOSHIBA 2-2E1B Weight: 0.006 g (typ.) Characteristics Symbol Test Condition Min Typ.
Published: |