• Part: 3SK195
  • Description: Silicon N Channel Dual Gate MOS Type FET
  • Manufacturer: Toshiba
  • Size: 179.71 KB
Download 3SK195 Datasheet PDF
Toshiba
3SK195
3SK195 is Silicon N Channel Dual Gate MOS Type FET manufactured by Toshiba.
TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type TV Tuner, VHF RF Amplifier Applications FM Tuner Applications Unit: mm - Superior cross modulation performance. - Low reverse transfer capacitance: Crss = 0.015 pF (typ.) - Low noise figure: NF = 1.1dB (typ.) Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate 1-source voltage Gate 2-source voltage Drain current Drain power dissipation Channel temperature Storage temperature range Symbol VDS VG1S VG2S ID PD Tch Tstg Rating 13.5 ±8 ±8 30 150 125 -55~125 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) JEDEC ― JEITA ― TOSHIBA 2-3J1A Weight: 0.013 g (typ.) Character...