5FL2C48A Overview
VDRM = 200, 300 V · Average output rectified current: IO = 5 A · Ultra fast reverse-recovery time: Max Unit ¾ 0.98 V ¾ 1.3 ¾ 10 mA ¾ 35 ns 100 ns ¾ 3.5 °C/W VFM, IRRM, trr, tfr:.
| Part number | 5FL2C48A |
|---|---|
| Datasheet | 5FL2C48A_ToshibaSemiconductor.pdf |
| File Size | 166.14 KB |
| Manufacturer | Toshiba |
| Description | SILICON EPITAXIAL TYPE HIGH EFFICIENCY DIODE STACK |
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VDRM = 200, 300 V · Average output rectified current: IO = 5 A · Ultra fast reverse-recovery time: Max Unit ¾ 0.98 V ¾ 1.3 ¾ 10 mA ¾ 35 ns 100 ns ¾ 3.5 °C/W VFM, IRRM, trr, tfr:.
| Part Number | Description |
|---|---|
| 5FL2CZ47A | SILICON EPITAXIAL TYPE HIGH EFFICIENCY DIODE STACK |