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A1049 - 2SA1049

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2SA1049 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1049 Audio Frequency Amplifier Applications • • • • • Small package. High breakdown voltage: VCEO = −120 V High hFE: hFE = 200~700 Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.) Complementary to 2SC2459. Unit: mm • Low noise: NF = 1dB (typ.), 10dB (max) www.DataSheet4U.com Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating −120 −120 −5 −100 −20 200 125 −55~125 Unit V V V mA mA mW °C °C JEDEC JEITA TOSHIBA ― ― 2-4E1A Weight: 0.13 g (typ.