A1150 Description
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1150 2SA1150 Low Frequency Amplifier Applications Unit: hFE = 100~320 plementary to 2SC2710. Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −35 V Collector-emitter voltage VCEO −30 V Emitter-base voltage VEBO −5 V Collector current IC −800 mA Base current IB −160 mA Collector power dissipation PC 300 mW Junction...