A1163
Overview
2SA1163 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1163 Audio Frequency General Purpose Amplifier Applications • High voltage: VCEO = −120 V • Excellent hFE linearity: hFE (IC = ...
| Part | A1163 |
|---|---|
| Description | 2SA1163 |
| Manufacturer | Toshiba |
| Size | 303.70 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| Q62702-A1160 | Siemens Semiconductor Group | Silicon Schottky Diodes |
| B78408-A1166-A3 | EPCOS | RF Transformers |
| A1162 | Allegro MicroSystems | Programmable Precision Hall-Effect Switch |
| Q62702-A1161 | Siemens Semiconductor Group | Silicon Schottky Diodes (For low-loss/ fast-recovery/ meter protection/ bias isolation and clamping applications Integrated diffused guard ring) |
| Q62702-A1162 | Siemens Semiconductor Group | Silicon Schottky Diodes (For low-loss/ fast-recovery/ meter protection/ bias isolation and clamping applications Integrated diffused guard ring) |