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2SA1163
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1163
Audio Frequency General Purpose Amplifier Applications
• High voltage: VCEO = −120 V • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA)
= 0.95 (typ.) • High hFE: hFE = 200 to 700 • Low noise: NF = 1dB (typ.), 10dB (max) • Complementary to 2SC2713 • Small package
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
−120
V
Collector-emitter voltage
VCEO
−120
V
Emitter-base voltage
VEBO −5 V
Collector current
IC
−100
mA
Base current
IB −20 mA
Collector power dissipation
PC 150 mW
Junction temperature Storage temperature range
Tj 125 °C
Tstg
−55 to 125
°C
JEDEC
TO-236MOD
Note: Using continuously under heavy loads (e.g.
A1163 Datasheet
