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2SA1357
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1357
Strobe Flash Applications Audio Power Amplifier Applications
Unit: mm
• • • •
hFE(1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) hFE(2) = 70 (min) (VCE = −2 V, IC = −4 A) Low saturation voltage: VCE (sat) = −1.0 V (max) (IC = −4 A, IB = −0.1 A) High power dissipation: PC = 10 W (Tc = 25°C), PC = 1.5 W (Ta = 25°C)
Absolute Maximum Ratings (Tc = 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage DC Collector current Pulsed (Note 1) Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating −35 −20 −8 −5 −8 −1 1.
A1357 Datasheet
