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TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SA1941
Power Amplifier Applications
2SA1941
Unit: mm
• High breakdown voltage: VCEO = −140 V (min) • Complementary to 2SC5198 • Recommended for 70-W high-fidelity audio frequency amplifier
output stage.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
−140
V
Collector-emitter voltage
VCEO
−140
V
Emitter-base voltage
VEBO
−5
V
Collector current
IC
−10
A
Base current
IB
−1
A
Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range
PC
100
W
Tj
150
°C
Tstg
−55 to 150
°C
JEDEC JEITA TOSHIBA
― ― 2-16C1A
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 4.7 g (typ.