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TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SB1015A
2SB1015A
Audio Frequency Power Amplifier Applications
· Low collector saturation voltage: VCE (sat) = −1.7 V (max) (IC = −3 A, IB = −0.3 A)
· Collector power dissipation: PC = 25 W (Tc = 25°C)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Ta = 25°C Tc = 25°C
Junction temperature
Storage temperature range
Symbol
VCBO VCEO VEBO
IC IB
PC
Tj Tstg
Rating
-60 -60 -7 -3 -0.5 2.0 25 150 -55~150
Unit V V V A A
W
°C °C
Unit: mm
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.
B1015A Datasheet
