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C2669

Manufacturer: Toshiba

C2669 datasheet by Toshiba.

C2669 datasheet preview

C2669 Datasheet Details

Part number C2669
Datasheet C2669-ToshibaSemiconductor.pdf
File Size 291.14 KB
Manufacturer Toshiba
Description 2SC2669
C2669 page 2 C2669 page 3

C2669 Overview

2SC2669 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC2669 High Frequency Amplifier Applications Unit: Gpe = 30dB (typ.) (f = 10.7 MHz) · Remended for FM IF, OSC stage and AM CONV, IF stage. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress.

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