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2SC2878
TOSHIBA Transistor
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Silicon NPN Epitaxial Type
2SC2878
Unit: mm
For Muting and Switching Applications
• • • High emitter-base voltage: VEBO = 25 V (min) High reverse hFE: Reverse hFE = 150 (typ.) (VCE = −2 V, IC = −4 mA) Low on resistance: RON = 1 Ω (typ.) (IB = 5 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 50 20 25 300 60 400 125 −55~125 Unit V V V mA mA mW °C °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.
C2878 Datasheet
