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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2983
Power Amplifier Applications Driver Stage Amplifier Applications
2SC2983
Unit: mm
• High transition frequency: fT = 100 MHz (typ.) • Complementary to 2SA1225
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
160
V
Collector-emitter voltage
VCEO
160
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
1.5
A
Base current
IB
0.3
A
Collector power dissipation
Ta = 25°C Tc = 25°C
PC
1.0 W
15
Junction temperature
Tj
150
°C
JEDEC
―
Storage temperature range
Tstg
−55 to 150
°C
JEITA
―
Note1: Using continuously under heavy loads (e.g.
C2983 Datasheet
