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C2983 - 2SC2983

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Datasheet Details

Part number C2983
Manufacturer Toshiba Semiconductor
File Size 166.62 KB
Description 2SC2983
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2983 Power Amplifier Applications Driver Stage Amplifier Applications 2SC2983 Unit: mm • High transition frequency: fT = 100 MHz (typ.) • Complementary to 2SA1225 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 160 V Collector-emitter voltage VCEO 160 V Emitter-base voltage VEBO 5 V Collector current IC 1.5 A Base current IB 0.3 A Collector power dissipation Ta = 25°C Tc = 25°C PC 1.0 W 15 Junction temperature Tj 150 °C JEDEC ― Storage temperature range Tstg −55 to 150 °C JEITA ― Note1: Using continuously under heavy loads (e.g.
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