Datasheet Summary
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3267
Power Amplifier Applications Power Switching Applications
2SC3267
Unit: mm
- Low saturation voltage: VCE (sat) = 0.5 V (max) @IC = 2 A
- plementary to 2SA1297
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
Symbol
VCBO VCEO VEBO
IC IB PC Tj Tstg
Rating
20 20 6 2 0.5 400 150 -55~150
Unit
V V V A A mW °C °C
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current Emitter cut-off current...