C3295 Datasheet | Toshiba

2SC3295 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3295 Audio Frequency Amplifier Applications Switching Applications - - - - High h FE: h FE = 600~3600 High voltage: VCEO = 50 V High collector current: IC = 150 m A (max) Small package Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 50 50 5 150 30 150 125 -55~125 Unit V V V m A m A m W °C °C JEDEC JEITA TOSHIBA TO-236MOD SC-59 2-3F1A Weight: 0.012 g (typ.) Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO IEBO h FE (Note) VCE (sat) f T Cob NF (1) Noise figure NF (2) Test Condition VCB = 50 V, IE = 0 VEB = 5 V, IC = 0 VCE = 6 V, IC = 2 m A IC = 100 m A, IB = 10 m A VCE = 10 V, IC = 10 m A VCB = 10 V, IE = 0, f = 1 MHz VCE = 6 V, IC = 0.1 m A, f = 100 Hz, Rg = 10 k W VCE = 6 V, IC = 0.1 m A, f = 1 k Hz, Rg = 10 k W Min ¾ ¾ 600 ¾ 100 ¾ ¾ ¾ Typ. ¾ ¾ ¾ 0.12 250 3.5 0.5 0.3 Max 0.1 0.1 3600 0.25 ¾ ¾ ¾ d B ¾ V MHz p F Unit m A m A Note: h FE classification A: 600~1800, B: 1200~3600 Marking 2003-03-25 Free Datasheet http://../ 2SC3295 2003-03-25 Free Datasheet http://../ 2SC3295 F r 2003-03-25 e e D 2SC3295 RESTRICTIONS ON PRODUCT USE 000707EAA - TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to ply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a...