The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC3710A
2SC3710A
High-Power Switching Applications
Unit: mm
• Low collector saturation voltage: VCE (sat) = 0.4 V (max) • High-speed switching: tstg = 1.0 μs (typ.) • Complementary to 2SA1452A
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 80 V
Collector-emitter voltage
VCEO 80 V
Emitter-base voltage
VEBO 6 V
Collector current
IC 12 A
Base current
IB 2 A
Collector power dissipation (Tc = 25°C)
PC 30 W
JEDEC
―
Junction temperature Storage temperature range
Tj 150 °C
Tstg
−55 to 150
°C
JEITA TOSHIBA
― 2-10R1A
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
Weight: 1.
C3710A Datasheet
