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C3886A Datasheet Silicon NPN Power Transistors

Manufacturer: Toshiba

Overview: Huandong Electronics Product Specification Silicon NPN Power Transistors.

General Description

¡¤ With TO-3P(H)IS package ¡¤ High voltage ,high speed APPLICATIONS ¡¤ Horizontal deflection output for high resolution display ..

¡¤ High speed switching regulator output applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol ¡¤ Absolute maximum ratings (Ta=25¡æ ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25¡æ CONDITIONS Open emitter Open base Open collector VALUE 1500 600 5 8 15 4 50 150 -55~150 ¡æ ¡æ V A A A W UNIT V V Huandong Electronics Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25¡æ unless otherwise specified PARAMETER CONDITIONS MIN 2SC3886A SYMBOL TYP.

MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=5mA ;IB=0 600 V ..

C3886A Distributor