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2SC5030
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5030
Strobe Flash Applications Medium Power Amplifier Applications
Unit: mm
• • •
High DC current gain : hFE (1) = 800 to 3200 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 250 (min) (VCE = 2 V, IC = 4 A) Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 4 A, IB = 40 mA) High collector power dissipation: PC = 1.3 W
Maximum Ratings (Ta = 25°C)
Characteristics Sy Collector-base voltage Collector-emitter voltage Emitter-base voltage DC I Collector current Pulse (Note) Base current Collector power dissipation Junction temperature Storage temperature range mbol VCBO VCES VCEO 20 VEBO
C
Rating 50 40
Unit V V V
8 5 8 0.5 3 150 −55 to 150
JEDEC
A
― ― 8M1A
ICP IB PC 1. Tj Tstg
JEITA TOSHIBA 2-
A W °C °C
Weight: 0.55 g (typ.
C5030 Datasheet
