• Part: C5197
  • Description: 2SC5197
  • Manufacturer: Toshiba
  • Size: 116.79 KB
Download C5197 Datasheet PDF
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Datasheet Summary

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5197 Power Amplifier Applications 2SC5197 Unit: mm - plementary to 2SA1940 - Suitable for use in 55-W high fidelity audio amplifier’s output stage Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB Tj Tstg Rating 120 120 5 8 0.8 - 55 to 150 Unit V V V A A °C °C Electrical Characteristics (Tc = 25°C) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current Collector-emitter...