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TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5266A
Switching Regulator Applications High-Voltage Switching Applications DC-DC Converter Applications
2SC5266A
Unit: mm
• Excellent switching times: tr = 0.5 μs (max), tf = 0.3 μs (max) • High breakdown voltage: VCEO = 400 V • High DC current gain: hFE = 20 (min)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulse
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO VCEO VEBO
IC ICP IB PC Tj Tstg
600
V
400
V
7
V
5 A
7
2
A
1.8
W
150
°C
−55 to 150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-10T1A
Weight: 1.5 g (typ.
C5266A Datasheet
