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2SC5352
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5352
Switching Regulator and High-Voltage Switching Applications High-Speed DC-DC Converter Applications
Unit: mm
• •
Excellent switching times: tr = 0.5 μs (max), tf = 0.3 μs (max) (IC = 4 A) High breakdown voltage: VCEO = 400 V
Absolute Maximum Ratings (Tc = 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 600 400 7 10 15 5 80 150 −55 to 150 Unit V V V A A W °C °C
JEDEC JEITA TOSHIBA
― ― 2-16C1A
Weight: 4.7 g (typ.)
Note: Using continuously under heavy loads (e.g.
C5352 Datasheet
