C5422 Datasheet | Toshiba

2SC5422 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5422 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS l High Voltage l Low Saturation Voltage l High Speed : VCBO = 1700 V : VCE (sat) = 3 V (Max.) : tf = 0.15 µs (Typ.) Unit: mm MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYM Collector- Base Voltage Collector- Emitter Voltage Emitter- Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range DC I Pulse BOL VCBO VCEO VEBO RATING 1700 V 600 5 15 30 7.5 A 200 150 ° - 55~150 ° UNIT ICP IB PC Tj Tstg JEDEC JEITA ― ― 2-21F2A TOSHIBA Weight: 9.75 g (typ.) ELECTRICAL CHARACTERISTICS (Tc = 25°C) CHARACTERISTIC S Collector Cut- off Current Emitter Cut- off Current Emitter- Base Breakdown Voltage DC Current Gain Collector- Emitter Saturation Voltage Base- Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Switching Time Storage Time Fall Time YMBOL ICBO IEBO V (BR) CEO h FE (1) h FE (2) VCE (sat) VBE (sat) f T Cob tstg tf TEST CONDITION VCB = 1700 V, IE = 0 VEB = 5 V, IC = 0 IC = 10 m A, IB = 0 VCE = 5 V, IC = 2 A VCE = 5 V, IC = 11 A IC = 11 A, IB = 2.75 A IC = 11 A, IB = 2.75 A VCE = 10 V, IC = 0.1 A VCB = 10 V, IE = 0, f = 1 MHz ICP = 8 A, IB1 (end) = 1.4 A f H = 64 k Hz MIN ― ― 600 10 4.5 ― ― ― ― 220 ― ― 2.5 0.15 0. TYP. ―1 ― 100 ― ― ― 8. ―3 1.0 2 1.5 ― ― p F 3.5 3 µs ―V 40 5 ― V V MHz MAX UNIT m A µA 2001-08-20 http://.. 2SC5422 2001-08-20 2SC5422 2001-08-20 2SC5422 2001-08-20 2SC5422 RESTRICTIONS ON PRODUCT USE 000707EAA - TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general ca n malfunction or f ail du e t o t heir in herent electrical s ensitivity and vulnerability to physical stress. It i s t he r esponsibility of th e buy er, w hen ut ilizing T OSHIBA produ cts, to ply with the...