• Part: C572
  • Description: 2SC572
  • Manufacturer: Toshiba
  • Size: 176.58 KB
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Datasheet Summary

2SC752(G)TM TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC752(G)TM Ultra High Speed Switching Applications puter, Counter Applications Unit: mm - High transition frequency: fT = 400 MHz (typ.) - Low saturation voltage: VCE (sat) = 0.3 V (max) - High speed switching time: tstg = 15 ns (typ.) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 40 15 5 200 40 400 125 -55~125 Unit V V V mA mA mW °C °C Electrical Characteristics (Ta = 25°C) Characteristics...