C5819 - 2SC5819

Toshiba Semiconductor

Datasheet Details

Part number	C5819
Manufacturer	Toshiba Semiconductor
File Size	141.66 KB
Description	2SC5819
Datasheet	C5819 Datasheet
Additional preview pages of the C5819 datasheet.

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Full PDF Text Transcription

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2SC5819 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5819 High-Speed Switching Applications DC-DC Converter Applications Industrial Applications Unit: mm • High DC current gain: hFE = 400 to 1000 (IC = 0.15 A) • Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max) • High-speed switching: tf = 45 ns (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation t = 10 s DC Junction temperature Storage temperature range VCBO 40 V VCEX 30 V VCEO 20 V VEBO 7 V IC 1.5 A ICP 2.5 IB 150 mA 2.0 PC (Note 1) W 1.

Published: Jan 31, 2017 |