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TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC6040
High-Speed and High-Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications
2SC6040
Unit: mm
• High-speed switching: tf = 0.2 µs (max) (IC = 0.3 A) • High breakdown voltage: VCES = 800 V, VCEO = 410 V
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulse
Base current
Collector power dissipation
Ta = 25°C
Junction temperature
Storage temperature range
Symbol
VCBO VCES VCEO VEBO
IC ICP IB
PC
Tj Tstg
Rating
800 800 410
8 1.0 2.0 0.5
1.0
150 −55 to 150
Unit V V V V
A
A W °C °C
1. Base 2. Collector 3.
C6040 Datasheet
