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CBS05F30 - Schottky Barrier Diode

Datasheet Summary

Features

  • (1) Low forward voltage: VF(3) = 0.38 V (typ. ) (2) Thin and compact packaging: Height = 0.40mm(max) 3. Packaging and Internal Circuit CBS05F30 1: Cathode 2: Anode CST2B 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Symbol Note Rating Unit Reverse voltage VR  30 V Average rectified current IO (Note 1) 500 mA Non-repetitive peak forward surge current IFSM (Note 2) 3 A Junction temperature Tj  125  Storage temperature Tstg  -55.

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Datasheet Details

Part number CBS05F30
Manufacturer Toshiba Semiconductor
File Size 123.60 KB
Description Schottky Barrier Diode
Datasheet download datasheet CBS05F30 Datasheet
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    Full PDF Text Transcription

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    Schottky Barrier Diode Silicon Epitaxial CBS05F30 1. Applications • High-Speed Switching 2. Features (1) Low forward voltage: VF(3) = 0.38 V (typ.) (2) Thin and compact packaging: Height = 0.40mm(max) 3. Packaging and Internal Circuit CBS05F30 1: Cathode 2: Anode CST2B 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Symbol Note Rating Unit Reverse voltage VR  30 V Average rectified current IO (Note 1) 500 mA Non-repetitive peak forward surge current IFSM (Note 2) 3 A Junction temperature Tj  125  Storage temperature Tstg  -55 to 125 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.
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