CBS05F30 - Schottky Barrier Diode

Product Overview

Toshiba Semiconductor

Part number	CBS05F30
Manufacturer	Toshiba Semiconductor
File Size	123.60 KB
Description	Schottky Barrier Diode
Datasheet	CBS05F30 Datasheet
Additional preview pages of the CBS05F30 datasheet.

(1) Low forward voltage: VF(3) = 0.38 V (typ. ) (2) Thin and compact packaging: Height = 0.40mm(max) 3. Packaging and Internal Circuit CBS05F30 1: Cathode 2: Anode CST2B 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Symbol Note Rating Unit Reverse voltage VR  30 V Average rectified current IO (Note 1) 500 mA Non-repetitive peak forward surge current IFSM (Note 2) 3 A Junction temperature Tj  125  Storage temperature Tstg  -55.

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Published: Mar 29, 2012 |