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○ Surge absorber
CMZ12 to CMZ51
TOSHIBA Zener Diode Silicon Diffused Type
CMZ12 to CMZ51
Unit: mm
• Average power dissipation : P = 2 W
• Zener voltage
: VZ = 12 to 51 V
• Suitable for compact assembly due to small surface mount package “M−FLATTM” (Toshiba package name)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Power dissipation
Symbol Rating Unit P 2 (Note 1) W
1. Anode 2. Cathode
Junction temperature
Tj −40 to 150 °C
Storage temperature range Tstg −40 to 150 °C
Note 1: Ta = 30°C
Device mounted on a ceramic board
Board size
: 50 mm × 50 mm
Land Pattern size : 2 mm × 2 mm
Board thickness : 0.64 mm
JEDEC JEITA TOSHIBA Weight: 0.023 g (typ.)
― ― 3-4E1S
Note 2: Using continuously under heavy loads (e.g.
CMZ12 Datasheet
