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D2271 - 2SD2271

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Part number D2271
Manufacturer Toshiba Semiconductor
File Size 139.01 KB
Description 2SD2271
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2SD2271 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington Power Transistor) 2SD2271 Motor Drive Applications High-Current Switching Applications Unit: mm • High DC current gain: hFE = 500 (min) (VCE = 2 V, IC = 5 A) • High breakdown voltage: VCEO (SUS) = 200 V (min) Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 300 200 6 ±12 ±18 1 2.0 30 150 −55 to 150 Unit V V V A A W °C °C Equivalent Circuit Base Collector ≈ 500 Ω ≈ 70 Ω Emitter JEDEC ― JEITA ― TOSHIBA 2-10R1A Weight: 1.7 g (typ.
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