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2SD2353
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SD2353
Power Amplifier Applications
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Unit: mm
• •
High DC current gain: hFE = 800 to 3200 Low collector saturation voltage: VCE (sat) = 0.4 V (typ.)
Absolute Maximum Ratings (Tc = 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 60 60 7 3 6 0.6 2 25 150 −55 to 150 Unit V V V A A W °C °C
JEDEC JEITA
― SC-67
TOSHIBA 2-10R1A Note: Using continuously under heavy loads (e.g. the application of high Weight: 1.7 g (typ.
D2353 Datasheet
