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2SD2604
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington)
2SD2604
High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications
Unit: mm
• •
High DC current gain: hFE = 2000 (min) Low saturation voltage: VCE (sat) = 1.5 V (max)
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Absolute Maximum Ratings (Tc = 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 95 110 ± 15 5 5 10 0.7 2.0 20 150 −55 to 150 Unit V V V A A W °C °C
JEDEC JEITA TOSHIBA
― SC-67 2-10R1A
Weight: 1.7 g (typ.) Note: Using continuously under heavy loads (e.g.
D2604 Datasheet
